发明授权
- 专利标题： Magnetic memory with asymmetric energy barrier
- 专利标题（中）： 具有不对称能量屏障的磁记忆体
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申请号： US12497953申请日： 2009-07-06
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公开(公告)号： US08169810B2公开(公告)日： 2012-05-01
- 发明人: Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
- 申请人： Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Mueting Raasch & Gebhardt PA
- 主分类号： G11C11/22
- IPC分类号： G11C11/22
摘要：
A magnetic tunnel junction cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state.
公开/授权文献
- US20100084725A1 MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER 公开/授权日：2010-04-08
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