Invention Grant
- Patent Title: Methods to fabricate functionally gradient materials and structures formed thereby
- Patent Title (中): 制造由此形成的功能梯度材料和结构的方法
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Application No.: US11863122Application Date: 2007-09-27
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Publication No.: US08173259B2Publication Date: 2012-05-08
- Inventor: Lakshmi Supriya , Linda A. Shekhawat
- Applicant: Lakshmi Supriya , Linda A. Shekhawat
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: B32B5/66
- IPC: B32B5/66

Abstract:
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of functionalized nanaparticles on a substrate by immersing the substrate in at least one of a solvent and a polymer matrix, wherein at least one of the solvent and the polymer matrix comprises a plurality of functionalized nanoparticles; and forming a second layer of functionalized nanoparticles on the first layer of functionalized particles, wherein there is a gradient in a property between the first layer and the second layer.
Public/Granted literature
- US20090087644A1 METHODS TO FABRICATE FUNCTIONALLY GRADIENT MATERIALS AND STRUCTURES FORMED THEREBY Public/Granted day:2009-04-02
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