发明授权
- 专利标题： Semiconductor element, method for manufacturing same, and electronic device including same
- 专利标题（中）： 半导体元件及其制造方法及包括其的电子器件
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申请号： US12530552申请日： 2008-04-01
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公开(公告)号： US08173487B2公开(公告)日： 2012-05-08
- 发明人: Masao Urayama , Masashi Kawasaki , Hideo Ohno
- 申请人： Masao Urayama , Masashi Kawasaki , Hideo Ohno
- 申请人地址： JP Osaka-Shi, Osaka JP Sendai-Shi, Miyagi
- 专利权人： Sharp Kabushiki Kaisha,Tohoku University
- 当前专利权人： Sharp Kabushiki Kaisha,Tohoku University
- 当前专利权人地址： JP Osaka-Shi, Osaka JP Sendai-Shi, Miyagi
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2007-101133 20070406
- 国际申请： PCT/JP2008/056501 WO 20080401
- 国际公布： WO2008/126729 WO 20081023
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/20
摘要：
A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.
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