发明授权
- 专利标题: Method of fabricating gate electrode using a treated hard mask
- 专利标题(中): 使用经处理的硬掩模制造栅电极的方法
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申请号: US12758491申请日: 2010-04-12
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公开(公告)号: US08173504B2公开(公告)日: 2012-05-08
- 发明人: Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
- 申请人: Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 代理机构: Lowe Hauptman Ham & Berner, LLP
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.