Invention Grant
US08173992B2 Transistor or triode structure with tunneling effect and insulating nanochannel
有权
具有隧道效应和绝缘纳米通道的晶体管或三极管结构
- Patent Title: Transistor or triode structure with tunneling effect and insulating nanochannel
- Patent Title (中): 具有隧道效应和绝缘纳米通道的晶体管或三极管结构
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Application No.: US11672342Application Date: 2007-02-07
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Publication No.: US08173992B2Publication Date: 2012-05-08
- Inventor: Thomas Skotnicki , Stephane Monfray
- Applicant: Thomas Skotnicki , Stephane Monfray
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR0650437 20060207
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at least one first block forming a cathode and at least one second block forming an anode. The first block and the second block are supported on the substrate, and are separated from each other by a channel insulating zone also supported on the substrate. A gate dielectric zone is supported on at least the channel insulating zone, and a gate is supported on the gate dielectric zone.
Public/Granted literature
- US20070200198A1 TRANSISTOR OR TRIODE STRUCTURE WITH TUNNELING EFFECT AND INSULATING NANOCHANNEL Public/Granted day:2007-08-30
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