Invention Grant
- Patent Title: Method of manufacturing MEMS sensor and MEMS sensor
- Patent Title (中): 制造MEMS传感器和MEMS传感器的方法
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Application No.: US12580052Application Date: 2009-10-15
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Publication No.: US08174085B2Publication Date: 2012-05-08
- Inventor: Goro Nakatani
- Applicant: Goro Nakatani
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-267555 20081016
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole.
Public/Granted literature
- US20100096714A1 METHOD OF MANUFACTURING MEMS SENSOR AND MEMS SENSOR Public/Granted day:2010-04-22
Information query
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