Invention Grant
US08174085B2 Method of manufacturing MEMS sensor and MEMS sensor 有权
制造MEMS传感器和MEMS传感器的方法

  • Patent Title: Method of manufacturing MEMS sensor and MEMS sensor
  • Patent Title (中): 制造MEMS传感器和MEMS传感器的方法
  • Application No.: US12580052
    Application Date: 2009-10-15
  • Publication No.: US08174085B2
    Publication Date: 2012-05-08
  • Inventor: Goro Nakatani
  • Applicant: Goro Nakatani
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Rabin & Berdo, P.C.
  • Priority: JP2008-267555 20081016
  • Main IPC: H01L29/84
  • IPC: H01L29/84
Method of manufacturing MEMS sensor and MEMS sensor
Abstract:
A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole.
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