发明授权
US08177911B2 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
有权
化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
- 专利标题： Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
- 专利标题（中）： 化合物半导体部件的损伤评价方法，化合物半导体部件，氮化镓系化合物半导体部件和氮化镓系化合物半导体膜的制造方法
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申请号： US11907322申请日： 2007-10-11
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公开(公告)号： US08177911B2公开(公告)日： 2012-05-15
- 发明人: Akihiro Hachigo , Takayuki Nishiura
- 申请人： Akihiro Hachigo , Takayuki Nishiura
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JPP2005-165957 20050606
- 主分类号： C30B29/14
- IPC分类号： C30B29/14
摘要：
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.
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