发明授权
- 专利标题： Nanoscale multi-junction quantum dot device and fabrication method thereof
- 专利标题（中）： 纳米多结量子点器件及其制造方法
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申请号： US12444956申请日： 2007-10-08
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公开(公告)号： US08178369B2公开(公告)日： 2012-05-15
- 发明人: Jung Bum Choi , Jong Jin Lee , Seung-Jun Shin , Rae-Sik Chung
- 申请人： Jung Bum Choi , Jong Jin Lee , Seung-Jun Shin , Rae-Sik Chung
- 申请人地址： KR Heungdeok-gu, Cheongju-si
- 专利权人： Nanochips, Inc.
- 当前专利权人： Nanochips, Inc.
- 当前专利权人地址： KR Heungdeok-gu, Cheongju-si
- 代理机构： Hiscock & Barclay, LLP
- 代理商 Thomas R. FitzGerald, Esq.
- 优先权： KR10-2006-0097768 20061009
- 国际申请： PCT/KR2007/004891 WO 20071008
- 国际公布： WO2008/044843 WO 20080417
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.
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