Invention Grant
- Patent Title: Method for fabricating lED chip comprising reduced mask count
- Patent Title (中): 制造lED芯片的方法包括减少掩模计数
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Application No.: US13046632Application Date: 2011-03-11
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Publication No.: US08178377B2Publication Date: 2012-05-15
- Inventor: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corp.
- Current Assignee: Lextar Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Priority: TW97127462A 20080718
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
Public/Granted literature
- US20110159614A1 Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing Public/Granted day:2011-06-30
Information query
IPC分类:
