Invention Grant
US08178414B2 NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting
有权
涉及外延生长的N型掺杂嵌入式eSiGe：C源极/漏极靶向的NMOS结构
- Patent Title: NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting
- Patent Title (中): 涉及外延生长的N型掺杂嵌入式eSiGe：C源极/漏极靶向的NMOS结构
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Application No.: US12632351Application Date: 2009-12-07
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Publication No.: US08178414B2Publication Date: 2012-05-15
- Inventor: Bin Yang , Bo Bai
- Applicant: Bin Yang , Bo Bai
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong Mori & Steiner, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short channel control, and reduced silicide to source/drain contact resistance.
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