发明授权
- 专利标题： Method of forming shallow trench isolation structures for integrated circuits
- 专利标题（中）： 形成集成电路浅沟槽隔离结构的方法
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申请号： US12107751申请日： 2008-04-22
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公开(公告)号： US08178417B2公开(公告)日： 2012-05-15
- 发明人: Shailendra Mishra , James Yong Meng Lee , Zhao Lun , Wen Zhi Gao , Chung Woh Lai , Huang Liu , Johnny Widodo , Liang Choo Hsia
- 申请人： Shailendra Mishra , James Yong Meng Lee , Zhao Lun , Wen Zhi Gao , Chung Woh Lai , Huang Liu , Johnny Widodo , Liang Choo Hsia
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte Ltd
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method of forming shallow trench isolation (STI) structures using a multi-step etch process is disclosed. The first etch step is performed by selectively etching the substrate at a substantially higher etching rate than the mask layer to form preliminary openings having steep taper angles. The second etch step is performed by non-selectively etching the substrate to deepen the preliminary openings to form STI gaps with substantially flat bottoms.