Invention Grant
US08178426B2 Method for manufacturing a structure of semiconductor-on-insulator type
有权
用于制造绝缘体上半导体型结构的方法
- Patent Title: Method for manufacturing a structure of semiconductor-on-insulator type
- Patent Title (中): 用于制造绝缘体上半导体型结构的方法
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Application No.: US12031202Application Date: 2008-02-14
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Publication No.: US08178426B2Publication Date: 2012-05-15
- Inventor: Aomar Halimaoui , Yves Morand , Yves Campidelli , Olivier Kermarrec
- Applicant: Aomar Halimaoui , Yves Morand , Yves Campidelli , Olivier Kermarrec
- Applicant Address: FR Montrouge FR Crolles
- Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Montrouge FR Crolles
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR0753287 20070215
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer.
Public/Granted literature
- US20080197447A1 METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE Public/Granted day:2008-08-21
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