Invention Grant
- Patent Title: Integrated circuit provided with a large area protection against electrostatic discharges
- Patent Title (中): 集成电路具有大面积防静电保护功能
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Application No.: US12759877Application Date: 2010-04-14
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Publication No.: US08179646B2Publication Date: 2012-05-15
- Inventor: Philippe Galy , Christophe Entringer
- Applicant: Philippe Galy , Christophe Entringer
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: The Noblitt Group PLLC
- Priority: FR0952753 20090427; EP10153640 20100215
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
An integrated circuit protected against electrostatic discharges, including: first and second supply rails; first and second intermediary rails normally connected to the first and second supply rails; inverters formed of a P-channel MOS transistor series-connected to an N-channel MOS transistor, the sources of the P-channel and N-channel MOS transistors being respectively connected to the first and second supply rails and the bodies of the P-channel and N-channel transistors being respectively connected to the first and second intermediary rails; a positive overvoltage detector between the first and second supply rails; and a switch for connecting the first and second intermediary rails to the second and first supply rails when a positive overvoltage is detected.
Public/Granted literature
- US20100271740A1 INTEGRATED CIRCUIT PROVIDED WITH A LARGE AREA PROTECTION AGAINST ELECTROSTATIC DISCHARGES Public/Granted day:2010-10-28
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