Invention Grant
US08179646B2 Integrated circuit provided with a large area protection against electrostatic discharges 有权
集成电路具有大面积防静电保护功能

Integrated circuit provided with a large area protection against electrostatic discharges
Abstract:
An integrated circuit protected against electrostatic discharges, including: first and second supply rails; first and second intermediary rails normally connected to the first and second supply rails; inverters formed of a P-channel MOS transistor series-connected to an N-channel MOS transistor, the sources of the P-channel and N-channel MOS transistors being respectively connected to the first and second supply rails and the bodies of the P-channel and N-channel transistors being respectively connected to the first and second intermediary rails; a positive overvoltage detector between the first and second supply rails; and a switch for connecting the first and second intermediary rails to the second and first supply rails when a positive overvoltage is detected.
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