Invention Grant
- Patent Title: Memory circuit and voltage detection circuit including the same
- Patent Title (中): 存储电路和电压检测电路包括相同的
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Application No.: US12847147Application Date: 2010-07-30
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Publication No.: US08179729B2Publication Date: 2012-05-15
- Inventor: Kotaro Watanabe , Tomohiro Oka , Teruo Suzuki
- Applicant: Kotaro Watanabe , Tomohiro Oka , Teruo Suzuki
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2009-185982 20090810; JP2010-134002 20100611
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
Provided are a memory circuit having a small circuit scale and a voltage detection circuit including the memory circuit. An NMOS transistor (21) is in an off state during loading and writing and is in an on state during reading. An NMOS transistor (22) is turned on when a high level input is received and turned off when a low level input is received. An NMOS transistor (23) is in the off state during loading and writing and is in the on state during reading. A PMOS transistor (26) is in the on state during loading and is in the off state during writing and reading. A PMOS transistor (27) is turned off when the high level input is received during loading, is turned on when the low level input is received during loading, and is in the on state during writing and reading.
Public/Granted literature
- US20110032776A1 MEMORY CIRCUIT AND VOLTAGE DETECTION CIRCUIT INCLUDING THE SAME Public/Granted day:2011-02-10
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