Invention Grant
- Patent Title: Flash memory devices including ready/busy control circuits and methods of testing the same
- Patent Title (中): 闪存设备包括就绪/繁忙的控制电路和测试方法
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Application No.: US12370227Application Date: 2009-02-12
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Publication No.: US08179732B2Publication Date: 2012-05-15
- Inventor: Sang-gu Kang
- Applicant: Sang-gu Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2008-0013486 20080214
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A flash memory device includes a chip disable fuse circuit that has a fuse and that outputs a chip disable signal when the fuse is cut out, and a ready/busy control circuit that forcibly activates a ready/busy signal representing an internal operational state in response to the chip disable signal and externally outputs the ready/busy signal through a ready/busy output pin.
Public/Granted literature
- US20090207663A1 Flash Memory Devices Including Ready/Busy Control Circuits and Methods of Testing the Same Public/Granted day:2009-08-20
Information query
