Invention Grant
- Patent Title: Semiconductor optical element
- Patent Title (中): 半导体光学元件
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Application No.: US13279460Application Date: 2011-10-24
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Publication No.: US08179942B2Publication Date: 2012-05-15
- Inventor: Kazuhisa Takagi
- Applicant: Kazuhisa Takagi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2006-276837 20061010
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
Public/Granted literature
- US20120056293A1 SEMICONDUCTOR OPTICAL ELEMENT Public/Granted day:2012-03-08
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