发明授权
- 专利标题: Memory array error correction apparatus, systems, and methods
- 专利标题(中): 存储器阵列纠错装置,系统和方法
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申请号: US13086137申请日: 2011-04-13
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公开(公告)号: US08181086B2公开(公告)日: 2012-05-15
- 发明人: John F. Schreck , Todd A. Dauenbaugh
- 申请人: John F. Schreck , Todd A. Dauenbaugh
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: H03M13/00
- IPC分类号: H03M13/00
摘要:
Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.
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