Invention Grant
US08183078B2 Device with integrated circuit and encapsulated N/MEMS and method for production
有权
具有集成电路和封装的N / MEMS器件及其制造方法
- Patent Title: Device with integrated circuit and encapsulated N/MEMS and method for production
- Patent Title (中): 具有集成电路和封装的N / MEMS器件及其制造方法
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Application No.: US12744827Application Date: 2008-12-03
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Publication No.: US08183078B2Publication Date: 2012-05-22
- Inventor: Eric Ollier , Thomas Baron
- Applicant: Eric Ollier , Thomas Baron
- Applicant Address: FR Paris FR Crolles
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,STMicroelectronics (Crolles 2) SAS
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0759541 20071204
- International Application: PCT/EP2008/066733 WO 20081203
- International Announcement: WO2009/071595 WO 20090611
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.
Public/Granted literature
- US20100314668A1 DEVICE WITH INTEGRATED CIRCUIT AND ENCAPSULATED N/MEMS AND METHOD FOR PRODUCTION Public/Granted day:2010-12-16
Information query
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