发明授权
- 专利标题: Glass flux assisted sintering of chemical solution deposited thin dielectric films
- 专利标题(中): 玻璃助熔烧结化学溶液沉积的薄介电膜
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申请号: US12301791申请日: 2006-06-15
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公开(公告)号: US08183108B2公开(公告)日: 2012-05-22
- 发明人: William J. Borland , Seigi Suh , Jon-Paul Maria , Jon Fredrick Ihlefeld , Ian Burn
- 申请人: William J. Borland , Seigi Suh , Jon-Paul Maria , Jon Fredrick Ihlefeld , Ian Burn
- 申请人地址: US DE Wilmington
- 专利权人: CDA Processing Limited Liability Company
- 当前专利权人: CDA Processing Limited Liability Company
- 当前专利权人地址: US DE Wilmington
- 国际申请: PCT/US2006/023457 WO 20060615
- 国际公布: WO2007/145630 WO 20071221
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01B3/20 ; H01B3/00
摘要:
A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.
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