Invention Grant
- Patent Title: Glass flux assisted sintering of chemical solution deposited thin dielectric films
- Patent Title (中): 玻璃助熔烧结化学溶液沉积的薄介电膜
-
Application No.: US12301791Application Date: 2006-06-15
-
Publication No.: US08183108B2Publication Date: 2012-05-22
- Inventor: William J. Borland , Seigi Suh , Jon-Paul Maria , Jon Fredrick Ihlefeld , Ian Burn
- Applicant: William J. Borland , Seigi Suh , Jon-Paul Maria , Jon Fredrick Ihlefeld , Ian Burn
- Applicant Address: US DE Wilmington
- Assignee: CDA Processing Limited Liability Company
- Current Assignee: CDA Processing Limited Liability Company
- Current Assignee Address: US DE Wilmington
- International Application: PCT/US2006/023457 WO 20060615
- International Announcement: WO2007/145630 WO 20071221
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01B3/20 ; H01B3/00

Abstract:
A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.
Public/Granted literature
- US20100230149A1 Glass Flux Assisted Sintering of Chemical Solution Deposited Thin Dielectric Films Public/Granted day:2010-09-16
Information query
IPC分类: