发明授权
- 专利标题: Buried aperture nitride light-emitting device
- 专利标题(中): 埋入孔径氮化物发光器件
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申请号: US12723544申请日: 2010-03-12
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公开(公告)号: US08183649B2公开(公告)日: 2012-05-22
- 发明人: Christopher L. Chua , Zhihong Yang
- 申请人: Christopher L. Chua , Zhihong Yang
- 申请人地址: US CA Palo Alto
- 专利权人: Palo Alto Research Center Incorporated
- 当前专利权人: Palo Alto Research Center Incorporated
- 当前专利权人地址: US CA Palo Alto
- 代理商 Jonathan A. Small
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L29/82 ; H01L29/84
摘要:
A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.
公开/授权文献
- US20100166032A1 Buried Aperture Nitride Light-Emiting Device 公开/授权日:2010-07-01
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