发明授权
- 专利标题： Semiconductor component having rectifying junctions of different magnitudes and method for producing the same
- 专利标题（中）： 具有不同幅度的整流结的半导体元件及其制造方法
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申请号： US12037269申请日： 2008-02-26
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公开(公告)号： US08183660B2公开(公告)日： 2012-05-22
- 发明人: Michael Rueb , Roland Rupp , Michael Treu
- 申请人： Michael Rueb , Roland Rupp , Michael Treu
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Dickstein Shapiro LLP
- 优先权： DE102007009227 20070226
- 主分类号： H01L21/329
- IPC分类号： H01L21/329 ; H01L29/872
摘要：
A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.
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