Invention Grant
- Patent Title: 1200° C. film resistor
- Patent Title (中): 1200°C薄膜电阻
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Application No.: US12237742Application Date: 2008-09-25
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Publication No.: US08183974B2Publication Date: 2012-05-22
- Inventor: Karlheinz Wienand , Thomas Loose , Margit Sander
- Applicant: Karlheinz Wienand , Thomas Loose , Margit Sander
- Applicant Address: DE Hanau
- Assignee: Heracus Sensor Technology GmbH
- Current Assignee: Heracus Sensor Technology GmbH
- Current Assignee Address: DE Hanau
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: DE102007046900 20070928
- Main IPC: H01C7/02
- IPC: H01C7/02

Abstract:
For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.
Public/Granted literature
- US20090115567A1 1200°C Film Resistor Public/Granted day:2009-05-07
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