Invention Grant
- Patent Title: Thin film transistor structure
- Patent Title (中): 薄膜晶体管结构
-
Application No.: US11849593Application Date: 2007-09-04
-
Publication No.: US08184226B2Publication Date: 2012-05-22
- Inventor: Yu-Min Lin , Feng-Yuan Gan
- Applicant: Yu-Min Lin , Feng-Yuan Gan
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corp.
- Current Assignee: Au Optronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
- Priority: TW95146465A 20061212
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L29/04 ; H01L29/10 ; H01L31/00
Abstract:
A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.
Public/Granted literature
- US20080135843A1 Thin Film Transistor Structure Public/Granted day:2008-06-12
Information query
IPC分类:
