发明授权
- 专利标题： Magnetoresistive element and method of manufacturing the same
- 专利标题（中）： 磁阻元件及其制造方法
-
申请号： US12320668申请日： 2009-01-30
-
公开(公告)号： US08184408B2公开(公告)日： 2012-05-22
- 发明人: Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- 申请人： Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, P.C.
- 优先权： JP2008-019365 20080130
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01L29/82
摘要：
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.