Invention Grant
- Patent Title: Semiconductor switching device
- Patent Title (中): 半导体开关装置
-
Application No.: US13243772Application Date: 2011-09-23
-
Publication No.: US08184477B2Publication Date: 2012-05-22
- Inventor: Hyun-Jin Cho
- Applicant: Hyun-Jin Cho
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Timothy M. Honeycutt
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
Public/Granted literature
- US20120014177A1 SEMICONDUCTOR SWITCHING DEVICE Public/Granted day:2012-01-19
Information query