Laser release process for very thin Si-carrier build

Invention Grant

US08187923B2 Laser release process for very thin Si-carrier build 有权

Title translation: 用于非常薄的Si载体构建的激光释放过程

Patent Title: Laser release process for very thin Si-carrier build
Patent Title (中): 用于非常薄的Si载体构建的激光释放过程
Application No.: US12167745

Application Date: 2008-07-03
Publication No.: US08187923B2

Publication Date: 2012-05-29
Inventor: Paul Stephen Andry , Leena Paivikki Buchwalter , Matthew J. Farinelli , Sherif A. Goma , Raymond R. Horton , Edmund J. Sprogis
Applicant: Paul Stephen Andry , Leena Paivikki Buchwalter , Matthew J. Farinelli , Sherif A. Goma , Raymond R. Horton , Edmund J. Sprogis
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Connolly Bove Lodge & Hutz LLP
Agent Daniel P. Morris, Esq.
Main IPC: H01L21/44
IPC: H01L21/44 ; H01L21/48 ; H01L21/50

Abstract:

A laser release and glass chip removal process for a integrated circuit module avoiding carrier edge cracking is provided.

Abstract(Chinese):

提供了用于避免载波边缘破裂的集成电路模块的激光释放和玻璃切屑去除工艺。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的