发明授权
- 专利标题: Workpiece patterning with plasma sheath modulation
- 专利标题(中): 工件图案化等离子体鞘调制
-
申请号: US12646407申请日: 2009-12-23
-
公开(公告)号: US08187979B2公开(公告)日: 2012-05-29
- 发明人: Deepak A. Ramappa , Ludovic Godet
- 申请人: Deepak A. Ramappa , Ludovic Godet
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.
公开/授权文献
- US20110151610A1 WORKPIECE PATTERNING WITH PLASMA SHEATH MODULATION 公开/授权日:2011-06-23
信息查询
IPC分类: