Invention Grant
- Patent Title: Forming a phase change memory with an ovonic threshold switch
- Patent Title (中): 形成一个带有超声门限开关的相变存储器
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Application No.: US11262246Application Date: 2005-10-28
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Publication No.: US08188454B2Publication Date: 2012-05-29
- Inventor: Charles H. Dennison
- Applicant: Charles H. Dennison
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A phase change memory may include an ovonic threshold switch formed over an ovonic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
Public/Granted literature
- US20070096090A1 Forming a phase change memory with an ovonic threshold switch Public/Granted day:2007-05-03
Information query
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