Invention Grant
- Patent Title: Test device and a semiconductor integrated circuit device
- Patent Title (中): 测试装置和半导体集成电路装置
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Application No.: US12502497Application Date: 2009-07-14
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Publication No.: US08188469B2Publication Date: 2012-05-29
- Inventor: Sang-Jin Lee , Gin-Kyu Lee
- Applicant: Sang-Jin Lee , Gin-Kyu Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0069542 20080717
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
A test device includes a semiconductor substrate having a first test region and a second test region defined thereon, wherein a layout of the first test region includes first active regions separated from each other by isolation regions in the semiconductor substrate, second active regions formed between the first active regions, first gate lines formed on the semiconductor substrate, wherein each of the first gate lines has a first end adjacent to one of the first active regions and a second end adjacent to an end of one of the second active regions, respectively, first shared contacts each formed over a respective one of the second ends of the first gate lines and an upper part of one of the first active regions, and first nodes formed on the first shared contacts to be electrically connected to the first shared contacts, respectively.
Public/Granted literature
- US20100012933A1 TEST DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-01-21
Information query
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