发明授权
- 专利标题: Structure and method to form EDRAM on SOI substrate
- 专利标题(中): 在SOI衬底上形成EDRAM的结构和方法
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申请号: US12437242申请日: 2009-05-07
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公开(公告)号: US08188528B2公开(公告)日: 2012-05-29
- 发明人: Chengwen Pei , Kangguo Cheng , Herbert L. Ho , Subramanian S. Iyer , Byeong Y. Kim , Geng Wang , Huilong Zhu
- 申请人: Chengwen Pei , Kangguo Cheng , Herbert L. Ho , Subramanian S. Iyer , Byeong Y. Kim , Geng Wang , Huilong Zhu
- 申请人地址: US NY Armonk
- 专利权人: International Buiness Machines Corporation
- 当前专利权人: International Buiness Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A memory device is provided that in one embodiment includes a trench capacitor located in a semiconductor substrate including an outer electrode provided by the semiconductor substrate, an inner electrode provided by a conductive fill material, and a node dielectric layer located between the outer electrode and the inner electrode; and a semiconductor device positioned centrally over the trench capacitor. The semiconductor device includes a source region, a drain region, and a gate structure, in which the semiconductor device is formed on a semiconductor layer that is separated from the semiconductor substrate by a dielectric layer. A first contact is present extending from an upper surface of the semiconductor layer into electrical contact with the semiconductor substrate, and a second contact from the drain region of the semiconductor device in electrical contact to the conductive material within the at least one trench.
公开/授权文献
- US20100283093A1 Structure and Method to Form EDRAM on SOI Substrate 公开/授权日:2010-11-11