Invention Grant
- Patent Title: Capacitive sensor and manufacturing method therefor
- Patent Title (中): 电容传感器及其制造方法
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Application No.: US12277329Application Date: 2008-11-25
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Publication No.: US08188555B2Publication Date: 2012-05-29
- Inventor: Yasushi Igarashi
- Applicant: Yasushi Igarashi
- Applicant Address: JP Tokyo
- Assignee: OKI Semiconductor Co., Ltd.
- Current Assignee: OKI Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLLC
- Priority: JP2007-315328 20071206
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A capacitive sensor includes a semiconductor substrate, a fixed electrode serving as a first electrode formed on a surface of or in the semiconductor substrate, a structure formed on the semiconductor substrate to have a vibratable second electrode that is formed to be spaced from and opposed to the semiconductor substrate and from the fixed electrode serving as the first electrode, a sealing member serving as a first sealing member formed on the semiconductor substrate to be spaced from the structure, to cover the structure, and to have a through hole serving as a first through hole, and a movable electrode serving as a vibratable third electrode formed on the sealing member to block up the through hole, and to be spaced from and opposed to the movable electrode.
Public/Granted literature
- US20090146227A1 CAPACITIVE SENSOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-06-11
Information query
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