Invention Grant
US08193029B2 Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
有权
使用单个元件制造具有相变纳米线形成的相变随机存取存储器件的方法
- Patent Title: Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
- Patent Title (中): 使用单个元件制造具有相变纳米线形成的相变随机存取存储器件的方法
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Application No.: US12801450Application Date: 2010-06-09
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Publication No.: US08193029B2Publication Date: 2012-06-05
- Inventor: Tae-Yon Lee
- Applicant: Tae-Yon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C
- Priority: KR10-2009-0055763 20090623
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/335
Abstract:
A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.
Public/Granted literature
- US20100323492A1 Methods of manufacturing phase-change random access memory devices Public/Granted day:2010-12-23
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