发明授权
US08193029B2 Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
有权
使用单个元件制造具有相变纳米线形成的相变随机存取存储器件的方法
- 专利标题: Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
- 专利标题(中): 使用单个元件制造具有相变纳米线形成的相变随机存取存储器件的方法
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申请号: US12801450申请日: 2010-06-09
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公开(公告)号: US08193029B2公开(公告)日: 2012-06-05
- 发明人: Tae-Yon Lee
- 申请人: Tae-Yon Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C
- 优先权: KR10-2009-0055763 20090623
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/335
摘要:
A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.