Invention Grant
- Patent Title: Charged particle beam apparatus
- Patent Title (中): 带电粒子束装置
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Application No.: US13032050Application Date: 2011-02-22
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Publication No.: US08193493B2Publication Date: 2012-06-05
- Inventor: Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
- Applicant: Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2007-052166 20070302
- Main IPC: G01N23/00
- IPC: G01N23/00 ; G01N23/225

Abstract:
A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
Public/Granted literature
- US20110139985A1 CHARGED PARTICLE BEAM APPARATUS Public/Granted day:2011-06-16
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