发明授权
- 专利标题: Charged particle beam apparatus
- 专利标题(中): 带电粒子束装置
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申请号: US13032050申请日: 2011-02-22
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公开(公告)号: US08193493B2公开(公告)日: 2012-06-05
- 发明人: Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
- 申请人: Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2007-052166 20070302
- 主分类号: G01N23/00
- IPC分类号: G01N23/00 ; G01N23/225
摘要:
A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
公开/授权文献
- US20110139985A1 CHARGED PARTICLE BEAM APPARATUS 公开/授权日:2011-06-16