A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, a source electrode disposed along the inner wall of the through hole, a drain electrode disposed along the inner wall of the through hole, a gate electrode disposed on the other surface of the resin film opposing the through hole, an insulating layer disposed on the gate electrode at the bottom of the through hole and an organic semiconductor disposed in the through hole so as to contact the source electrode and the drain electrode, wherein the organic semiconductor makes contact with at least a part of the insulating layer at the bottom of the through hole so that a channel is formed in the organic semiconductor in the vicinity of the insulating layer that is in contact therewith.