发明授权
- 专利标题: Perovskite oxide thin film EL element
- 专利标题(中): 钙钛矿氧化物薄膜EL元件
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申请号: US12735793申请日: 2009-02-17
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公开(公告)号: US08193704B2公开(公告)日: 2012-06-05
- 发明人: Hiroshi Takashima , Yoshiyuki Inaguma , Noboru Miura , Kazushige Ueda , Mitsuru Itoh
- 申请人: Hiroshi Takashima , Yoshiyuki Inaguma , Noboru Miura , Kazushige Ueda , Mitsuru Itoh
- 申请人地址: JP Tokyo
- 专利权人: National Institute of Advanced Industrial Science and Technology
- 当前专利权人: National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址: JP Tokyo
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 优先权: JP2008-037038 20080219
- 国际申请: PCT/JP2009/052680 WO 20090217
- 国际公布: WO2009/104595 WO 20090827
- 主分类号: H01J1/62
- IPC分类号: H01J1/62
摘要:
There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
公开/授权文献
- US20110121722A1 PEROVSKITE OXIDE THIN FILM EL ELEMENT 公开/授权日:2011-05-26
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