发明授权
US08193851B2 Fuse circuit of semiconductor device and method for monitoring fuse state thereof 失效
半导体装置的保险丝电路及其熔断状态的监视方法

  • 专利标题: Fuse circuit of semiconductor device and method for monitoring fuse state thereof
  • 专利标题(中): 半导体装置的保险丝电路及其熔断状态的监视方法
  • 申请号: US12494520
    申请日: 2009-06-30
  • 公开(公告)号: US08193851B2
    公开(公告)日: 2012-06-05
  • 发明人: Seung-Lo Kim
  • 申请人: Seung-Lo Kim
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Gyeonggi-do
  • 代理机构: IP & T Group LLP
  • 优先权: KR10-2009-0043554 20090519
  • 主分类号: H01H37/76
  • IPC分类号: H01H37/76 H01H85/00
Fuse circuit of semiconductor device and method for monitoring fuse state thereof
摘要:
A fuse circuit of a semiconductor device includes a plurality of fuse set units configured to compare an input address with address information programmed according to a fuse cutting state and a test control unit configured to enable one or more fuse set units selected based on a number of times that a selection signal is enabled in a test mode.
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