Invention Grant
US08194371B2 Integrated circuit protection device 有权
集成电路保护装置

Integrated circuit protection device
Abstract:
A semiconductor device is provided. In an embodiment, the semiconductor device includes an inverter. The inverter is coupled to an NMOS device. The NMOS device may be protection device which protects the inverter from charging effects and/or plasma induced damage. The NMOS device may be coupled to a power source (e.g., Vss). The NMOS device may be further coupled to a capacitor. The charge of the capacitor may discharge a current through the NMOS device to the power source.
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