Invention Grant
- Patent Title: Integrated circuit protection device
- Patent Title (中): 集成电路保护装置
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Application No.: US12419608Application Date: 2009-04-07
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Publication No.: US08194371B2Publication Date: 2012-06-05
- Inventor: Chin-Hsin Tang , Jian-Hsing Lee
- Applicant: Chin-Hsin Tang , Jian-Hsing Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A semiconductor device is provided. In an embodiment, the semiconductor device includes an inverter. The inverter is coupled to an NMOS device. The NMOS device may be protection device which protects the inverter from charging effects and/or plasma induced damage. The NMOS device may be coupled to a power source (e.g., Vss). The NMOS device may be further coupled to a capacitor. The charge of the capacitor may discharge a current through the NMOS device to the power source.
Public/Granted literature
- US20100254050A1 INTEGRATED CIRCUIT PROTECTION DEVICE Public/Granted day:2010-10-07
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