发明授权
US08196071B2 Creating mask data of integrated circuit patterns using calculated etching conversion difference
失效
使用计算出的蚀刻转换差异创建集成电路图案的掩模数据
- 专利标题： Creating mask data of integrated circuit patterns using calculated etching conversion difference
- 专利标题（中）： 使用计算出的蚀刻转换差异创建集成电路图案的掩模数据
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申请号： US12688644申请日： 2010-01-15
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公开(公告)号： US08196071B2公开(公告)日： 2012-06-05
- 发明人: Hiromitsu Mashita , Katsumi Iyanagi , Takafumi Taguchi , Toshiya Kotani , Hidefumi Mukai , Taiga Uno , Takashi Nakazawa
- 申请人： Hiromitsu Mashita , Katsumi Iyanagi , Takafumi Taguchi , Toshiya Kotani , Hidefumi Mukai , Taiga Uno , Takashi Nakazawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2009-008135 20090116
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A pattern data creating method comprising: referring to a first correspondence relation between an amount of dimension variation between a first pattern formed on a substrate and a second pattern formed by processing the substrate using the first pattern and either one of a pattern total surface area and a pattern boundary length of the first pattern; and creating pattern data for forming the first pattern.
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