发明授权
- 专利标题: Process for producing semiconductor device
- 专利标题(中): 半导体器件的制造方法
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申请号: US12602156申请日: 2008-06-17
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公开(公告)号: US08198006B2公开(公告)日: 2012-06-12
- 发明人: Toshio Banba
- 申请人: Toshio Banba
- 申请人地址: JP Tokyo
- 专利权人: Sumitomo Bakelite Co., Ltd.
- 当前专利权人: Sumitomo Bakelite Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Ditthavong Mori & Steiner, P.C.
- 优先权: JP2007-159671 20070618; JP2008-152020 20080610
- 国际申请: PCT/JP2008/061385 WO 20080617
- 国际公布: WO2008/156190 WO 20081224
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F7/004 ; G03F7/40
摘要:
A process for producing a semiconductor device includes a circuit formation step of forming circuit wiring on a semiconductor wafer using a chemically-amplified resist, and a cured film formation step of forming a cured film that protects the circuit wiring after forming the circuit wiring, the cured film being formed of a cured material of a photosensitive resin composition that comprises an alkali-soluble resin having a polybenzoxazole structure or a polybenzoxazole precursor structure, a compound that generates an acid upon exposure to light, and a solvent. The photosensitive resin composition substantially does not contain N-methyl-2-pyrrolidone. The process can suppress a T-top phenomenon or the like that may occur when forming a circuit on a semiconductor wafer using a chemically-amplified resist in the production of semiconductor devices.
公开/授权文献
- US20100183985A1 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 公开/授权日:2010-07-22
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