发明授权
US08198126B2 Method for producing solid electrolytic capacitor 有权
固体电解电容器的制造方法

  • 专利标题: Method for producing solid electrolytic capacitor
  • 专利标题(中): 固体电解电容器的制造方法
  • 申请号: US11994393
    申请日: 2006-06-30
  • 公开(公告)号: US08198126B2
    公开(公告)日: 2012-06-12
  • 发明人: Kazumi Naito
  • 申请人: Kazumi Naito
  • 申请人地址: JP Tokyo
  • 专利权人: Showa Denko K.K.
  • 当前专利权人: Showa Denko K.K.
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Sughrue Mion, PLLC
  • 优先权: JP2005-191226 20050630
  • 国际申请: PCT/JP2006/313087 WO 20060630
  • 国际公布: WO2007/004553 WO 20070111
  • 主分类号: H01L51/40
  • IPC分类号: H01L51/40
Method for producing solid electrolytic capacitor
摘要:
The invention relates to a method for producing a solid electrolytic capacitor with excellent LC value, comprising sequentially stacking a dielectric oxide film, a semiconductor layer and an electrode layer on a sintered body of conductive powder to which an anode lead is connected and then encapsulating the whole with an outer jacket resin, wherein surface area of a cathode plate used in forming the semiconductor layer on the dielectric oxide film by applying current between the conductor having the dielectric oxide film thereon used as anode and the cathode plate provided in electrolysis solution is made larger by 10 times or more than its apparent surface area to thereby efficiently form the semiconductor layer, a capacitor produced by the method, and electronic circuits and electronic devices using the capacitor.
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