Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization

Invention Grant

US08198192B2 Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization 有权

Title translation: 通过在栅极电介质稳定之前扩散栅介质盖层材料来调整复杂晶体管的阈值电压

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Patent Title: Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
Patent Title (中): 通过在栅极电介质稳定之前扩散栅介质盖层材料来调整复杂晶体管的阈值电压
Application No.: US12775555

Application Date: 2010-05-07
Publication No.: US08198192B2

Publication Date: 2012-06-12
Inventor: Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
Applicant: Richard Carter , Martin Trentzsch , Sven Beyer , Rohit Pal
Applicant Address: KY Grand Cayman
Assignee: GlobalFoundries Inc.
Current Assignee: GlobalFoundries Inc.
Current Assignee Address: KY Grand Cayman
Agency: Williams, Morgan & Amerson
Priority: DE102009021486 20090515
Main IPC: H01L21/4763
IPC: H01L21/4763

Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization

Abstract:

Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.

Abstract(Chinese):

复杂的栅极电极结构可以通过在进行用于稳定敏感栅极介电材料的处理之前提供包括可能扩散到栅极电介质材料中的所需物质的覆盖层来形成。以这种方式，与常规策略相比，可以基于用于阈值调节物质的降低的温度和剂量来形成复杂的高k金属栅电极结构。此外，可以为两种类型的晶体管沉积单个含金属的电极材料。

Public/Granted literature

US20100289089A1 ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A GATE DIELECTRIC CAP LAYER MATERIAL PRIOR TO GATE DIELECTRIC STABILIZATION Public/Granted day:2010-11-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）