发明授权
- 专利标题： Manufacturing method of semiconductor substrate
- 专利标题（中）： 半导体衬底的制造方法
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申请号： US13041543申请日： 2011-03-07
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公开(公告)号： US08198193B2公开(公告)日： 2012-06-12
- 发明人: Naoshi Sakuma , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
- 申请人： Naoshi Sakuma , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-188836 20100825
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
公开/授权文献
- US20120052680A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 公开/授权日：2012-03-01
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