发明授权
- 专利标题： Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head
- 专利标题（中）： 外延膜，压电元件，铁电元件，其制造方法和液体排出头
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申请号： US12526308申请日： 2008-03-05
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公开(公告)号： US08198199B2公开(公告)日： 2012-06-12
- 发明人: Jumpei Hayashi , Takanori Matsuda , Tetsuro Fukui , Hiroshi Funakubo
- 申请人： Jumpei Hayashi , Takanori Matsuda , Tetsuro Fukui , Hiroshi Funakubo
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Canon Kabushiki Kaisha,Tokyo Institute of Technology
- 当前专利权人： Canon Kabushiki Kaisha,Tokyo Institute of Technology
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2007-094116 20070330
- 国际申请： PCT/JP2008/054425 WO 20080305
- 国际公布： WO2008/126575 WO 20081023
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2 (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.
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