To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.