发明授权
- 专利标题： Semiconductor devices and systems
- 专利标题（中）： 半导体器件和系统
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申请号： US12329841申请日： 2008-12-08
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公开(公告)号： US08198650B2公开(公告)日： 2012-06-12
- 发明人: Stanislav Ivanovich Soloviev , Ho-Young Cha , Peter Micah Sandvik , Alexey Vert , Jody Alan Fronheiser
- 申请人： Stanislav Ivanovich Soloviev , Ho-Young Cha , Peter Micah Sandvik , Alexey Vert , Jody Alan Fronheiser
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Ann M. Agosti
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
公开/授权文献
- US20100140730A1 SEMICONDUCTOR DEVICES AND SYSTEMS 公开/授权日：2010-06-10
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