发明授权
- 专利标题： Semiconductor storage device and manufacturing method thereof
- 专利标题（中）： 半导体存储装置及其制造方法
-
申请号： US12245396申请日： 2008-10-03
-
公开(公告)号： US08198665B2公开(公告)日： 2012-06-12
- 发明人: Kenji Kawabata , Hisataka Meguro
- 申请人： Kenji Kawabata , Hisataka Meguro
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2007-262471 20071005
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
A semiconductor storage device includes: a substrate having a semiconductor layer at least on a surface thereof; and a plurality of quantum dot elements forming a charge storage layer formed above the semiconductor layer via a first insulating film that becomes a tunnel insulating film in such a manner that the quantum dot elements are connected with a bit line in series, wherein each quantum dot element forms a single electron memory.
公开/授权文献
信息查询
IPC分类:
