Invention Grant
- Patent Title: Method of forming wire bonds in semiconductor devices
- Patent Title (中): 在半导体器件中形成引线键合的方法
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Application No.: US12510274Application Date: 2009-07-28
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Publication No.: US08198737B2Publication Date: 2012-06-12
- Inventor: Changliang Zhang , Yingwei Jiang , Zhijie Wang , Wei Xiao
- Applicant: Changliang Zhang , Yingwei Jiang , Zhijie Wang , Wei Xiao
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Priority: CN200910159553 20090616
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A method of forming a wire bond in a semiconductor device includes forming a first bump of a first composition proximate to a probe mark on a bond pad. A second bump of the first composition is formed adjacent to the first bump such that the first and second bumps are formed away from the probe mark. A wire of a second composition that is harder than the first composition is attached on top of the first and second bumps to form an interconnection.
Public/Granted literature
- US20100314754A1 METHOD OF FORMING WIRE BONDS IN SEMICONDUCTOR DEVICES Public/Granted day:2010-12-16
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