发明授权
- 专利标题: Voltage-boosting stage
- 专利标题(中): 升压阶段
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申请号: US12447175申请日: 2007-10-19
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公开(公告)号: US08198756B2公开(公告)日: 2012-06-12
- 发明人: Berry A. J. Buter , Alexandre Huffenus
- 申请人: Berry A. J. Buter , Alexandre Huffenus
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 优先权: EP06122999 20061026
- 国际申请: PCT/IB2007/054261 WO 20071019
- 国际公布: WO2008/050272 WO 20080502
- 主分类号: H02M3/181
- IPC分类号: H02M3/181
摘要:
The invention relates to a voltage-boosting stage (100) comprising a first capacitive voltage circuit (S1, S2, S3, S4, C0, Cb) coupled to a power supply (Vs) and providing an output voltage at an output terminal. The voltage-boosting stage further comprises a second capacitive voltage circuit (S5, S6, S7, S8, C1, Cb) coupled to a power supply (Vs) and providing another output voltage at another output terminal the output terminal and the other terminals being coupled together and further coupled to a supply terminal of a power stage (S9, S10) for implementing a two-level boosted power stage.
公开/授权文献
- US20100038972A1 VOLTAGE-BOOSTING STAGE 公开/授权日:2010-02-18
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