Invention Grant
US08198883B2 Semiconductor device, internal circuit control signal measurement circuit, and delay time measurement method
失效
半导体器件，内部电路控制信号测量电路和延迟时间测量方法
- Patent Title: Semiconductor device, internal circuit control signal measurement circuit, and delay time measurement method
- Patent Title (中): 半导体器件，内部电路控制信号测量电路和延迟时间测量方法
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Application No.: US12588760Application Date: 2009-10-27
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Publication No.: US08198883B2Publication Date: 2012-06-12
- Inventor: Hiromasa Noda , Kenji Yoshida
- Applicant: Hiromasa Noda , Kenji Yoshida
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-279774 20081030
- Main IPC: H03D13/00
- IPC: H03D13/00 ; G01R31/3187
Abstract:
In a semiconductor device manufactured in a semiconductor chip, an internal circuit generates first and second internal circuit control signals which are produced as a delay time measurement start signal and a delay time measurement stop signal, respectively, which are sent to a delay time measurement circuit. The delay time measurement circuit measures a delay time between the start and the stop signals and outputs the delay time.
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